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2N6581 Dataheets PDF



Part Number 2N6581
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet 2N6581 Datasheet2N6581 Datasheet (PDF)

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6581 DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) APPLICATIONS ·Off-line power supplies ·Switching amplifiers ·Inverters/Converters ·Motor speed control circuits ·Switching regulator ·Solenoid& relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 5.

  2N6581   2N6581


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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6581 DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) APPLICATIONS ·Off-line power supplies ·Switching amplifiers ·Inverters/Converters ·Motor speed control circuits ·Switching regulator ·Solenoid& relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 550 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9.0 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 5A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.4 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark .


2N6580 2N6581 2N6609


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