Document
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6581
DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min)
APPLICATIONS ·Off-line power supplies ·Switching amplifiers ·Inverters/Converters ·Motor speed control circuits ·Switching regulator ·Solenoid& relay drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
550 V
VCEO Collector-Emitter Voltage
450 V
VEBO
Emitter-Base Voltage
9.0 V
IC Collector Current-Continuous
10 A
ICM Collector Current-Peak
16 A
IB Base Current-Continuous
5A
PC Collector Power Dissipation@TC=25℃ 125
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.4
UNIT ℃/W
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