90T03GH

Advanced Power Electronics Corp. AP90T03GH/J Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On- resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G Description D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP90T03GJ) is available for low-profile applications. BVDSS RDS(ON) ID 30V 4mΩ 75A G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient G D S TO-...