Document
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
N-channel 600 V - 0.25 Ω typ., 13 A FDmesh™ II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet − production data
TAB
3 1
D2PAK
TAB
3 2 1
TO-220FP
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
'7$%
* 6
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Features
Order codes
STB18NM60ND STF18NM60ND STP18NM60ND STW18NM60ND
VDSS @ TJmax
650 V
RDS(on) max
ID
<0.29 Ω 13 A
• The worldwide best RDS(on)* area amongst the fast recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche capabilities
Applications
• Switching applications
Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance a.