AUTOMOTIVE GRADE
INSULATED GATE BIPOLAR TRANSISTOR
C
Features • Standard: Optimized for minimum saturation
voltage an...
AUTOMOTIVE GRADE
INSULATED GATE BIPOLAR
TRANSISTOR
C
Features Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz) Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency Industry standard TO-247AC package Lead-Free Automotive Qualified *
G
E
n-channel
AUIRG4PH50S
VCES = 1200V IC = 81A@ TC = 100°C VCE(on) typ. = 1.47V@ 33A
Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions
G Gate
TO-247AC
C Collector
E Emitter
Base part number AUIRG4PH50S
Package Type TO-247AC
Standard Pack
Form
Quantity
Tube
25
Complete Part Number AUIRG4PH50S
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE
PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Thermal Resistance
RθJC (IGBT) RθCS RθJA
Collector-to-Emitter Voltage
Parameter
Continuous Collector Current
Continuous Collector Current
d Pulse...