36Mb Sync Burst SRAMs
GS832118/32/36E-250/225/200/166/150/133
165-Bump FP-BGA Commercial Temp Industrial Temp
2M x 18, 1M x 32, 1M x 36 36Mb...
Description
GS832118/32/36E-250/225/200/166/150/133
165-Bump FP-BGA Commercial Temp Industrial Temp
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O
Features
IEEE 1149.1 JTAG-compatible Boundary Scan 2.5 V or 3.3 V +10%/–10% core power supply 2.5 V or 3.3 V I/O supply LBO pin for Linear or Interleaved Burst mode Internal input resistors on mode pins allow floating mode pins Byte Write (BW) and/or Global Write (GW) operation Internal self-timed write cycle Automatic power-down for portable applications JEDEC-standard 165-bump FP-BGA package Pb-Free 165-bump BGA package available
Functional Description
Applications The GS832118/32/36E is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging ...
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