2SB1089

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current:: IC= -3A ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1567 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -5 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.6 A 1.3 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1089 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1089 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -50mA; VCE= -5V hFE-2 DC Current Gain IC= -0.5A; VCE= -5V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= -0.1A; VCE= -5V MIN TYP. MAX UNIT -1.5 V -2.0 V -10 μA -10 μA 20 ...