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2N6211

Part Number	2N6211
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistors
Published	Oct 14, 2016
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6211 DESCRIPTION ·High Collector-Emitter Sustaining Voltage-...
Datasheet	2N6211 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6211 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -225V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier, switching regulators, converters, inverters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous -275 -225 -6 -2 ICM Collector Current-Peak -5 IB ...

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