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2N6057

Silicon NPN Power Transistors

Description

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6057 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) ·Complement to type 2N6050 APPLICATIONS ·Designed for general purpose amplifier and low frequen...

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