INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@...
INCHANGE Semiconductor
isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -3A ·Complement to Type 2N6045
isc Product Specification
2N6042
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-5
IC Collector Current-Continuous
-8
ICM Collector Current-Peak
-16
IB Base Current-DC
PC
Collector Power Dissipation TC=25℃
Tj Junction Temperature
-120 75 150
Tstg Storage Temperature Range
-65~150
UNIT V V V A A mA W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.67 ℃/W
isc website:www.iscsemi.com
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