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2N5971

Part Number	2N5971
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Oct 14, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5971 DESCRIPTION ·Collector-Emitte...
Datasheet	2N5971 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5971 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.
0V(Max)@ IC = 5A ·Excellent Safe Operating Area APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage switching regulator circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃...

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