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GS81302T110E Dataheets PDF



Part Number GS81302T110E
Manufacturers GSI Technology
Logo GSI Technology
Description 144Mb SigmaDDR-II+ Burst of 2 SRAM
Datasheet GS81302T110E DatasheetGS81302T110E Datasheet (PDF)

GS81302T07/10/19/37E-450/400/350/333/300 165-Bump BGA Commercial Temp Industrial Temp 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 450 MHz–300 MHz 1.8 V VDD 1.8 V or 1.5 V I/O Features • 2.0 Clock Latency • Simultaneous Read and Write SigmaDDR™ Interface • Common I/O bus • JEDEC-standard pinout and package • Double Data Rate interface • Byte Write controls sampled at data-in time • Burst of 2 Read and Write • On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs • 1.8 V +100.

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GS81302T07/10/19/37E-450/400/350/333/300 165-Bump BGA Commercial Temp Industrial Temp 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 450 MHz–300 MHz 1.8 V VDD 1.8 V or 1.5 V I/O Features • 2.0 Clock Latency • Simultaneous Read and Write SigmaDDR™ Interface • Common I/O bus • JEDEC-standard pinout and package • Double Data Rate interface • Byte Write controls sampled at data-in time • Burst of 2 Read and Write • On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs • 1.8 V +100/–100 mV core power supply • 1.5 V or 1.8 V HSTL Interface • Pipelined read operation with self-timed Late Write • Fully coherent read and write pipelines • ZQ pin for programmable output drive strength • Data Valid pin (QVLD) Support • IEEE 1149.1 JTAG-compliant Boundary Scan • 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package • RoHS-compliant 165-bump BGA package available SigmaDDR™ Family Overview The GS81302T07/10/19/37E are built in compliance with the SigmaDDR-II+ SRAM pinout standard for Common I/O synchronous SRAMs. They are 150,994,944-bit (144Mb) SRAMs. The GS81302T07/10/19/37E SigmaDDR-II+ SRAMs are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems. Clocking and Addressing Schemes The GS81302T07/10/19/37E SigmaDDR-II+ SRAMs are synchronous devices. They employ two input register clock inputs, K and K. K and K are independent single-ended clock inputs, not differential inputs to a single differential clock input buffer. Each internal read and write operation in a SigmaDDR-II+ B2 RAM is two times wider than the device I/O bus. An input data bus de-multiplexer is used to accumulate incoming data before it is simultaneously written to the memory array. An output data multiplexer is used to capture the data produced from a single memory array read and then route it to the appropriate output drivers as needed. Therefore, the address field of a SigmaDDR-II+ B2 RAM is always one address pin less than the advertised index depth (e.g., the 16M x 8 has an 8M addressable index). Parameter Synopsis tKHKH tKHQV -450 2.2 ns 0.45 ns -400 2.5 ns 0.45 ns -350 2.86 ns 0.45 ns -333 3.0 ns 0.45 ns -300 3.3 ns 0.45 ns Rev: 1.03a 11/2011 1/31 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS81302T07/10/19/37E-450/400/350/333/300 16M x 8 SigmaDDR-II+ SRAM—Top View 123456789 A CQ SA SA R/W NW1 K SA LD SA B NC NC NC SA NC/SA (288Mb) K NW0 SA NC C NC NC NC VSS SA SA SA VSS NC D NC NC NC VSS VSS VSS VSS VSS NC E NC NC DQ4 VDDQ VSS VSS VSS VDDQ NC F NC NC NC VDDQ VDD VSS VDD VDDQ NC G NC NC DQ5 VDDQ VDD VSS VDD VDDQ NC H Doff VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ J NC NC NC VDDQ VDD VSS VDD VDDQ NC K NC NC NC VDDQ VDD VSS VDD VDDQ NC L NC DQ6 NC VDDQ VSS VSS VSS VDDQ NC M NC NC NC VSS VSS V.


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