MOSFET
SMP60N03-10L
Siliconix
N-Channel 30-V (D-S), 150_C MOSFET, Logic Level
Product Summary
V(BR)DSS (V) 30
rDS(on) (W) 0....
Description
SMP60N03-10L
Siliconix
N-Channel 30-V (D-S), 150_C MOSFET, Logic Level
Product Summary
V(BR)DSS (V) 30
rDS(on) (W) 0.01
TO-220AB
ID (A) 60
D
G
DRAIN connected to TAB
GD S
S
Top View
N-Channel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energya
Power Dissipation
Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.)
TC = 25_C TC = 100_C
L = 0.1 mH L = 0.05 mH TC = 25_C TC = 100_C
Symbol VDS VGS
ID
IDM IAR EAS EAR
PD
TJ, Tstg TL
Limit 30 "20 60 51 240 60 180 90 105 42
–55 to 150 300
Unit V
A
mJ W _C
Thermal Resistance Ratings
Parameter
Symbol
Typical
Maximum
Junction-to-Ambient Junction-to-Case Case-to-Sink
RthJA RthJC RthCS
1.0
80 1.2
Notes: a. Duty cycle v1%
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70280. A SPICE Model data sheet is available for this product (FaxBack document #70525).
Unit _C/W
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253—Rev. D, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
1-5
SMP60N03-10L
Siliconix
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Drain-Sour...
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