DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
MMBT3906 PNP switching transistor
Product data sheet Supersed...
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
MMBT3906
PNP switching
transistor
Product data sheet Supersedes data of 2000 Apr 11
2003 Mar 18
NXP Semiconductors
PNP switching
transistor
Product data sheet
MMBT3906
FEATURES
Collector current capability IC = −200 mA Collector-emitter voltage VCEO = −40 V.
APPLICATIONS General switching and amplification.
DESCRIPTION
PNP switching
transistor in a SOT23 plastic package.
NPN complement: MMBT3904.
MARKING
TYPE NUMBER MMBT3906
MARKING CODE(1) 7B∗
Note 1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia. ∗ = W: Made in China.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO IC
collector-emitter voltage collector current (DC)
MAX. UNIT −40 V −200 mA
PINNING
PIN 1 2 3
base emitter collector
DESCRIPTION
handbook, halfpage
3
3
1
1
Top view
2
MAM256
2
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb
PARAMETER
collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
CONDITIONS open emitter open base open collector
Tamb ≤ 25 °C; note 1
Note 1.
Transistor mounted on an FR4 printed-circuit board.
MIN.
− − − − − − − −65 − −65
MAX.
−40 −40 −6 −200 −200 −100 250 +150 150 +150
UNIT
V V V mA mA mA mW °C...