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PN10HN60 Dataheets PDF



Part Number PN10HN60
Manufacturers Chipown
Logo Chipown
Description N-Channel Superjunction MOSFET
Datasheet PN10HN60 DatasheetPN10HN60 Datasheet (PDF)

PN10HN60 N-Channel Superjunction MOSFET 600V, 10A, 0.38Ω Chipown NeoFET® General Description The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET. By combining the experience of the leading SJ MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provid.

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PN10HN60 N-Channel Superjunction MOSFET 600V, 10A, 0.38Ω Chipown NeoFET® General Description The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET. By combining the experience of the leading SJ MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provides superior switching performance and ruggedness. The NeoFET fits the PC ATX Power, Server, Telecom, Adapter, LCD and PDP TV, Lighting, UPS and industrial power applications. Features ■ RDS(on) = 0.34Ω ( Typ.)@ VGS = 10V, ID = 5A ■ Extremely high dv/dt capablity ■ Very high commutation ruggedness ■ Extremely low losses due to very low Rdson*Qg ■ Ultra low gate charge ( Typ. Qg = 25nC) ■ Low effective output capacitance ■ 100% avalanche tested ■ JEDEC qualified, Pb-free plating Applications ■ PC ATX Power ■ Adapter ■ LCD and PDP TV ■ Lighting ■ Server, Telecom, ■ UPS ■ Switching applications Pin Assignments TO-220 TO-220FP Order codes PN10HN60-CAI-T1 PN10HN60-CBI-T1 Package TO220 TO220FP 8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn Rev.A.1110 1/8 PN10HN60 Electrical Characteristics Table 1. Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) SYMBOL PARAMETER Value (TO-220) Value (TO-220FP) VDSS Darin to Source Voltage ID Continuous Drain Current (Tc=25°C) Continuous Drain Current (Tc=100°C) 600 10 7 IDM VGS EAS IAR dv/dt Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Avalanche Current Peak Diode Recovery 30 ±30 200 3.5 35 PD Total Power Dissipation (Tc= 25°C) Derating Factor 83.3 29.8 0.67 0.24 TSTG TJ Operating junction temperature & Storage temperature -55~+150 UNIT V A A A V mJ A V/ns W W/°C °C Table 2. Thermal Characteristics SYMBOL PARAMETER RJC Thermal Resistance, Junction-Case RCS Thermal Resistance, Junction-Heat Sink RJA Thermal Resistance, Junction- ambient Value (TO-220) 1.5 0.5 62.5 Value (TO-220FP) 4.2 0.5 62.5 UNIT °C/W °C/W °C/W 8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn Rev.A.1110 2/8 PN10HN60 Table 3. Electrical Characteristics (TJ = 25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Off Characteristics BVDSS IDSS IGSS Drain-Source Breakdown Voltage Drain-Source Leakage Current Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Leakage Reverse VGS=0V,ID=250μA VDS=600V,VGS=0V VDS=600V,VGS=0V TJ=125°C VDS=0V,VGS=30V VDS=0V,VGS=-30V On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage VDS=VGS, ID=250μA Static Drain-Source On-state Resistance VGS=10V,ID=5A Dynamic Characteristics gfs(1) Ciss Coss Crss Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS=15V,ID=5A VGS=0V, VDS=100V f=1MHz Switching Characteristics td(ON) Turn-on Delay Time tr Rise Time td(ON) Turn-off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD=380V,RG=4.7 ID=4.5A,VGS=10V VDS=380V,ID=4.5A VGS=10V 600 - - V - - 1 μA - - 50 μA - - 100 nA - - -100 nA 2- 4 V - 0.34 0.38 ohm - 8.3 - 658 - 46 - 6.2 - S pF - 13 -9 - 57 -- 10 - 25 - 3.9 - 4.4 - ns nC Table 4. Source-Drain Diode Ratings and Characteristics (TJ = 25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS IS Continuous Source Current VGS=0V ISM(2) Pulsed Source Current VGS=0V VSD(1) Diode Forward Voltage IS=1A,VGS=0V trr Reverse Recovery Time IS=4.5A,VDD=300V dIF=100A/us Qrr Reverse Recovery Charge NOTES (1) Pulsed test: Pulsed width=300μs, Duty Cycle=1.5% (2) Pulsed width limited by safe operating area MIN TYP MAX UNIT - - 10 - - 30 - - 1.2 - 200 - 2200 - A A V ns nC 8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn Rev.A.1110 3/8 Typical Performance Characteristics Figure1. On-Region Characteristics PN10HN60 Figure2. Transfer Characteristics Figure3. On-Resistance Variation vs.Drain Current and Gate Voltage Figure4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure5. Capacitance Characteristics Figure6. Gate Charge Characteristics 8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn Rev.A.1110 4/8 PN10HN60 RDS(on),[Normalized] Drain-Source On-Resistance Figure7. Breakdown Voltage Variation vs. Temperature 1.2 Figure8. On-Resistance Variation vs. Temperature 1.1 1.0 0.9 0.8 -100 *Notes: 1.VGS=0V 2.ID=1mA -50 0 50 100 150 TJ,Junction Temperature[0C] 200 Figure9. Maximum Drain Current vs. Case Temperature ID,Drain Current[A] Figure 10. Maximum Safe Operating Area 50 10 1 Opreati.


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