Document
PN10HN60
N-Channel Superjunction MOSFET 600V, 10A, 0.38Ω
Chipown
NeoFET®
General Description
The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET. By combining the experience of the leading SJ MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provides superior switching performance and ruggedness. The NeoFET fits the PC ATX Power, Server, Telecom, Adapter, LCD and PDP TV, Lighting, UPS and industrial power applications.
Features
■ RDS(on) = 0.34Ω ( Typ.)@ VGS = 10V, ID = 5A ■ Extremely high dv/dt capablity ■ Very high commutation ruggedness ■ Extremely low losses due to very low Rdson*Qg ■ Ultra low gate charge ( Typ. Qg = 25nC) ■ Low effective output capacitance ■ 100% avalanche tested ■ JEDEC qualified, Pb-free plating
Applications
■ PC ATX Power ■ Adapter ■ LCD and PDP TV ■ Lighting ■ Server, Telecom, ■ UPS ■ Switching applications
Pin Assignments
TO-220
TO-220FP
Order codes PN10HN60-CAI-T1 PN10HN60-CBI-T1
Package TO220 TO220FP
8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn
Rev.A.1110
1/8
PN10HN60
Electrical Characteristics
Table 1. Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
SYMBOL
PARAMETER
Value (TO-220)
Value (TO-220FP)
VDSS
Darin to Source Voltage
ID Continuous Drain Current (Tc=25°C)
Continuous Drain Current (Tc=100°C)
600 10 7
IDM VGS EAS IAR dv/dt
Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Avalanche Current Peak Diode Recovery
30 ±30 200 3.5 35
PD Total Power Dissipation (Tc= 25°C) Derating Factor
83.3 29.8 0.67 0.24
TSTG TJ
Operating junction temperature & Storage temperature
-55~+150
UNIT
V A A A V mJ A V/ns W W/°C °C
Table 2. Thermal Characteristics
SYMBOL
PARAMETER
RJC Thermal Resistance, Junction-Case RCS Thermal Resistance, Junction-Heat Sink RJA Thermal Resistance, Junction- ambient
Value (TO-220)
1.5 0.5 62.5
Value (TO-220FP)
4.2 0.5 62.5
UNIT
°C/W °C/W °C/W
8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn
Rev.A.1110
2/8
PN10HN60
Table 3. Electrical Characteristics (TJ = 25°C, unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
Off Characteristics
BVDSS IDSS
IGSS
Drain-Source Breakdown Voltage Drain-Source Leakage Current Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Leakage Reverse
VGS=0V,ID=250μA VDS=600V,VGS=0V VDS=600V,VGS=0V TJ=125°C VDS=0V,VGS=30V VDS=0V,VGS=-30V
On Characteristics
VGS(th) RDS(ON)
Gate Threshold Voltage
VDS=VGS, ID=250μA
Static Drain-Source On-state Resistance VGS=10V,ID=5A
Dynamic Characteristics
gfs(1) Ciss Coss Crss
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS=15V,ID=5A
VGS=0V, VDS=100V f=1MHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Rise Time
td(ON)
Turn-off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=380V,RG=4.7 ID=4.5A,VGS=10V
VDS=380V,ID=4.5A VGS=10V
600 - - V - - 1 μA - - 50 μA - - 100 nA - - -100 nA
2- 4 V - 0.34 0.38 ohm
- 8.3 - 658 - 46 - 6.2
-
S pF
- 13 -9 - 57 -- 10 - 25 - 3.9 - 4.4
-
ns nC
Table 4. Source-Drain Diode Ratings and Characteristics (TJ = 25°C, unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IS Continuous Source Current
VGS=0V
ISM(2) Pulsed Source Current
VGS=0V
VSD(1) Diode Forward Voltage
IS=1A,VGS=0V
trr Reverse Recovery Time
IS=4.5A,VDD=300V dIF=100A/us
Qrr Reverse Recovery Charge
NOTES
(1) Pulsed test: Pulsed width=300μs, Duty Cycle=1.5%
(2) Pulsed width limited by safe operating area
MIN TYP MAX UNIT
- - 10 - - 30 - - 1.2 - 200 - 2200 -
A A V ns nC
8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn
Rev.A.1110
3/8
Typical Performance Characteristics
Figure1. On-Region Characteristics
PN10HN60
Figure2. Transfer Characteristics
Figure3. On-Resistance Variation vs.Drain Current and Gate Voltage
Figure4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
Figure5. Capacitance Characteristics
Figure6. Gate Charge Characteristics
8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn
Rev.A.1110
4/8
PN10HN60
RDS(on),[Normalized] Drain-Source On-Resistance
Figure7. Breakdown Voltage Variation vs. Temperature
1.2
Figure8. On-Resistance Variation vs. Temperature
1.1
1.0
0.9
0.8 -100
*Notes: 1.VGS=0V 2.ID=1mA
-50 0 50 100 150
TJ,Junction Temperature[0C]
200
Figure9. Maximum Drain Current vs. Case Temperature
ID,Drain Current[A]
Figure 10. Maximum Safe Operating Area
50
10
1
Opreati.