Document
Main Product Characteristics
VDSS
650V
RDS(on) 0.74Ω (typ.)
ID 5A ①
Features and Benefits
TO-252 (DPAK)
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Lead free product
SSF5NS65UD
650V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
The SSF5NS65UD series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAR TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=22.4mH Avalanche Current @ L=22.4mH .