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SSF5510G

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N-Channel MOSFET


Description
SSF5510G Preliminary FEATURES  Advanced trench process technology  Ultra low Rdson, typical 8mohm  High avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product ID =56A BV=55V R DS (ON) =8mohm (typ.) DESCRIPTION The SSF5510G is a new generation of middle voltage and high current N–Channel enhancement mode tren...



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SSF5510G

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