SSF5508D

Main Product Characteristics SSF5508D Preliminary VDSS RDS(on) 60V（Typ） 3.8mohm（Typ） ID 110A Features and Benefits SSF5508D Top View (DPAK)  Advanced trench MOSFET process technology  Special designed for convertors and power controls  Ultra low on-resistance  150℃ operating temperature  High Avalanche capability and 100% tested  Lead free product Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① ID @ TC = 100°C IDM ISM Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Pulsed Source Current.(Body Diode) Power Dissipation③ PD @TC = 25°C Linear derating factor ...