N-Channel MOSFET
Main Product Characteristics
VDSS
55V
RDS(on) 3.8mohm(typ.)
ID 140A
TO- 220
Features and Benefits
Advanced tren...
Description
Main Product Characteristics
VDSS
55V
RDS(on) 3.8mohm(typ.)
ID 140A
TO- 220
Features and Benefits
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Lead free product
SSF5506
55V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VDS VGS EAS IAR TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH② Avalanche Current @ L=0.3mH② Operating Junction and Storage Temperature Range
Max. 140 100 520 220 1.5 55 ± 20 735 70 -55 to + 175
Units
A
W W/°C
V V mJ A °C
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Rev.1.0
SSF5506
55V N-Channel MOSFET
Thermal Resistance
Symbol RθJC
RθJA
Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. ...
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