SSF4414

SSF4414 30V N-Channel MOSFET DESCRIPTION The SSF4414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID = 8.5A RDS(ON) < 40mΩ @ VGS=4.5V RDS(ON) < 26mΩ @ VGS=10V ● High Power and current handling capability ● Lead free product ● Surface Mount Package APPLICATIONS ●PWM applications ●Load switch ●Power management D G S Schematic Diagram Marking and Pin Assignment PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF4414 SSF4414 SOP-8 Ø330mm SOP-8 Top View Tape Width 12mm Quantity 2500 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID(25℃) ID(70℃) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±20 8.5 7 50 3 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=24V,VGS=0V Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V 40 ℃/W Min Typ Max 30 1 ±100 Unit V μA nA www.goodark.com Page 1 of 4 Rev.1.2 SSF4414 30V N-Channel MOSFET ON CHARA...