SI7866ADP

N-Channel 20-V (D-S) MOSFET Si7866ADP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.0024 at VGS = 10 V 0.0030 at VGS = 4.5 V PowerPAK SO-8 ID (A)a 40 40 Qg (Typ.) 39 nC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 Bottom View Ordering Information: Si7866ADP-T1-E3 (Lead (Pb)-free) Si7866ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free available TrenchFET® Power MOSFET Low RDS(on) PWM (Qgd and Rg) Optimized 100 % Rg Tested RoHS COMPLIANT APPLICATIONS Low-Side MOSFET in Synchronous Buck DC/DC Converters in Desktops Low Output Voltage Synchronous Rectifier D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg Limit 20 ± 20 40 32 35b, c 28b, c 70 40 4.9b, c 25 31 83 53 5.4b, c 3.4b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA ...