RWP20050-10

Wideband Power Amplifier RWP20050-10 Product Features GaN on SiC Wideband Power Amplifier 1000 ~ 3000MHz Operation Bandwidth Power Gain 37dB @ Pin 10dBm 50W Typical @ Pin 10dBm Applications Communication System General Purpose Description RWP20050-10 is a unique GaN-SiC wideband power amplifier that powers 47dBm over a bandwidth of 1000-3000MHz. This GaN wideband power amplifier has been specifically developed for Communication System and other applications in general. This amplifier offers a typical Power Gain of 37dB, and typically draws 1.2A at +32Vcc. Electrical Specifications @ VCC = 32V; Tc = 45°C; ZS = ZL = 50Ω PARAMETER Operating Frequency Power Gain @ Pin 10dBm Power Gain Flatness @ Pin 10dBm Output Power @ Pin 10dBm Input Return Loss Supply Voltage Quiescent Current consumption Current Consumption @ Pin 10dBm UNIT MHz dB dBpp dBm dB V A A MIN 1000 35 45 31.5 - TYP 37 ±1.0 47 -10 32 1.2 5.0 MAX 3000 ±2.0 -7 1.7 6.5 On/Off Switching Time* uS - 2 5 Shut Down or Switch On/Off 0 V - 0.5 TTL Voltage** 2.5 5 5.5 Note. *. Gate On/Off : High speed switching **. Drain On/Off : 500ms delay CONDITION - 1000 ~ 3000MHz 1000 ~ 3000MHz 1000 ~ 3000MHz Vcc(=Vds) CW 1-tone On : TTL "Low" Off : TTL "High"(30mA@Disable) On : TTL “Low”(Enable) Off : TTL “High” Korean Facilities : 82-31-8069-3036 / [email protected] US Facility : 919-677-8780 / [email protected] 1/5 All specifications may change without notice Version 1.1 Wideband Power Amplifier RWP20...