RTP26056-20

GaN Power Amp Pallet Product Features Doherty amplifier design GaN on SiC HEMT Small and light weight 50 Ohm Input/Output impedance matched Highly reliable and rugged design High efficiency 56W typical PAVG RTP26056-20 Applications LTE DPD amplifier General purpose RF amplifier Description The RTP26056-20 is designed for RF system application frequencies from 2620 ~ 2690MHz, with high gain. This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, and high efficiency. The RTP26056-20 is a DPD application amplifier. Electrical Specifications @ VDD= 48V, 50Ω System PARAMETER Frequency Range Operating Bandwidth Average Output Power UNIT MHz MHz dBm MIN 2620 47 TYP 70 47.5 MAX 2690 - Peak Output Power (Pulse duty 10%) dBm 54.5 55 - ACPR (LTE 10MHz 1FA*1) @ Pout=47.5dBm Avg. Pre-DPD Post-DPD*2 dBc - -23 -52 - RF Gain @ 25℃ dB 52 54 56 Gain Variation dB ± 3dB @ operating temperature Gain Flatness dB - ± 0.5 ±1 Input Return Loss dB - - -12 Output Return Loss dB - - -17 Operating Voltage V VDC1: 5.6±3% VDC2:48 ±1V Current Consumption 5.6V 48V A - 0.25 0.30 2.76 2.89 Efficiency @ 47.5dBm % 40 42 - Feedback Output Level @ 47.5dBm dBm 5 Note 1. Signal source condition : LTE 10MHz 1FA, PAPR 7.5dB@0.01% probability on CCDF 7 9 2. DPD Solution : Broadcom OP6180 SYMBOL fO OBW Pout Psat ACPR GP G GF S11 S22 VDC IDD Eff FB Korean Facilities : 82-31-8069-3036 / rfsales@rf...