RTP21080-20

GaN Power Amp Pallet Product Features Doherty amplifier design GaN on SiC HEMT Small and light weight 50 Ohm Input/Output impedance matched Highly reliable and rugged design High efficiency 80W typical PAVG RTP21080-20 Applications WCDMA & LTE DPD amplifier General purpose RF amplifier Description The RTP21080-20 is designed for RF system application frequencies from 2110 ~ 2170MHz, with high gain. This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, and high efficiency. The RTP21080-20 is a DPD application amplifier. Electrical Specifications @ VDD= 48V, 50Ω System PARAMETER Frequency Range Operating Bandwidth Average Output Power UNIT MHz MHz dBm MIN 2110 48.5 TYP 60 49.0 MAX 2170 - Peak Output Power (Pulse duty 10%) dBm 55.7 56.2 - ACPR (LTE 10MHz 1FA*1) @ Pout=49.0dBm Avg. Pre-DPD Post-DPD*2 dBc - -23 -52 - RF Gain @ 25℃ dB 56 57 58 Gain Variation dB ± 3dB @ operating temperature Gain Flatness dB - ± 0.5 ±1 Input Return Loss dB - - -12 Output Return Loss dB - - -17 Operating Voltage V VDC1: 5.6±3% VDC2:48 ±1V Current Consumption 5.6V 48V A - 0.36 0.40 3.89 4.09 Efficiency @ 49.0dBm % 40 43 - Feedback Output level @ 49.0dBm dBm 8 Note 1. Signal source condition : LTE 10MHz 1FA, PAPR [email protected]% probability on CCDF 10 12 2. DPD Solution : Broadcom OP6180 SYMBOL fO OBW Pout Psat ACPR GP G GF S11 S22 VDC IDD Eff FB Korean Facilities : 82-31-8069-303...