IGBT Die
IRG4CC20FB IGBT Die in Wafer Form
PD- 91831A
IRG4CC20FB
C
G E
600 V Size 2 Fast Speed 6" Wafer
Electrical Characteri...
Description
IRG4CC20FB IGBT Die in Wafer Form
PD- 91831A
IRG4CC20FB
C
G E
600 V Size 2 Fast Speed 6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
Description
Guaranteed (Min/Max)
VCE (on) V(BR)CES
Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
1.6V Max. 600V Min.
VGE(th) ICES
Gate Threshold Voltage Zero Gate Voltage Collector Current
3.0V Min., 6.0V Max. 250µA Max.
IGES
Gate-to-Emitter Leakage Current
± 1.1µA Max.
Test Conditions
IC = 3.25A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, VGE = 0V VGE = VCE , TJ =25°C, IC =250µA TJ = 25°C, VCE = 600V TJ = 25°C, VGE = +/- 20V
Mechanical Data
Nominal Backmetal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment:
Cr-NiV-Ag (1 kA-2kA-2.5kA ) 99% Al, 1% Si (4 microns) 0.107" x 0.134" 150mm, with std. < 100 > flat .015" + / -.003" 01-5228 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated
Recommended Die Attach Conditions
Reference Standard IR packaged part ( for design ) : IRG4BC20F
Die Outline
nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C
www.irf.com
1
09/28/07
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Similar Datasheet
- IRG4CC20FB IGBT Die - International Rectifier