SILICON SWITCHING DIODES
BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES
SOT-143 CASE
w w w. c e n t r a l s e m...
Description
BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES
SOT-143 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is designed for high speed switching applications.
The BAW100G is Halogen Free by design.
MARKING CODES: BAW100: CJSS BAW100G: CJSG
MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0ms Peak Forward Surge Current, tp=1.0ms Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VR VRRM
IF IFRM IFSM IFSM IFSM
PD TJ, Tstg
ΘJA
75 85 250 500 4.0 2.0 1.0 350 -65 to +150 357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN MAX
IR IR IR BVR VF VF VF VF CT trr
VR=25V, TA=150°C
VR=75V
VR=75V, TA=150°C
IR=100μA
85
IF=1.0mA
IF=10mA
IF=50mA
IF=150mA
VR=0, f=1.0MHz
IF=IR=10mA, RL=100Ω, Rec. to 1.0mA
30 1.0 50
715 855 1.00 1.25 2.0 6.0
UNITS V V mA mA A A A
mW °C °C/W
UNITS μA μA μA V mV mV V V pF ns
R4 (20-November 2009)
BAW100 BAW100G
SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES
SOT-143 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE: 1) ANODE D1 2) ANODE D2 3) CATHOD...
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