AM7933P

Analog Power AM7933P Dual P-Channel 30-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Load Switches DC/DC Conversion Motor Drives VDS (V) -30 PRODUCT SUMMARY rDS(on) (mΩ) 8 @ VGS = -10V 12 @ VGS = -4.5V ID (A) -55c -45c DFN5X6-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain Current TA=25°C TA=70°C TC=25°C TC=70°C VGS ID ±20 -15a -12a -55c -44c Pulsed Drain Current b Continuous Source Current (Diode Conduction) a IDM -60 IS -3.3 TA=25°C 2.5 Power Dissipation TA=70°C TC=25°C PD 1.6 36 TC=70°C 23 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Steady State Symbol RθJA RθJC Maximum 50 70 3.5 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board b. Pulse width limited by maximum junction temperature c. Package limited © Preliminary 1 Publication Order Number: DS_AM7933P_1A Analog Power AM7933P Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 uA -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V, TJ = 55°...