AMD531C

Analog Power AMD531C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 30 20 @ VGS = 4.5V 16 @ VGS = 10V -30 33 @ VGS = -4.5V 23 @ VGS = -10V ID (A) 51 41 -41 -31 Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature DPAK Surface Mount Package Saves Board Space High power and current handling capability Low side high current DC-DC Converter applications D G1 S1 N-Channel MOSFET S1 G1 D S2 G1 S2 G2 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC ID IDM 30 -30 20 -20 51 -41.0 ±40 ±40 Continuous Source Current (Diode Conduction)a IS 30 -30 Power Dissipationa TA=25oC PD 50 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 -55 to 175 Units V A A W oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface M...