AMD532C

Analog Power AMD532C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 30 95 @ VGS = 2.5V 59 @ VGS = 4.5V -26.5 178 @ VGS = -2.5V 118 @ VGS = -4.5V ID (A) 20 24 -14 -17 Low rDS(on) provides higher efficiency and extends battery life D S2 Low thermal impedance copper leadframe DPAK saves board space Fast switching speed G1 G2 High performance trench technology S1 N-Channel MOSFET S1 G1 D S2 G1 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC ID IDM 30 -26.5 ±12 ±12 24 -17 40 -40 Continuous Source Current (Diode Conduction)a IS 30 -30 Power Dissipationa TA=25oC PD 50 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY ...