P-Channel MOSFET
Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proces...
Description
Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Low rDS(on) provides higher efficiency and extends battery life
Low thermal impedance copper leadframe SOT-23 saves board space
Fast switching speed
High performance trench technology ESD Protected
AM2321PE
PRODUCT SUMMARY
VDS (V)
rDS(on) (OHM)
-20 0.079 @ VGS = -4.5V 0.110 @ VGS = -2.5V
ID (A) -4.1 -3.2
G
S
D
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC TA=70oC
ID
IDM
-20 V ±8 -4.1 -3.3 A -10
Continuous Source Current (Diode Conduction)a
IS ±0.46 A
Power Dissipationa Operating Junction and Storage Temperature Range
TA=25oC TA=70oC
PD
TJ, Tstg
1.25 0.8 -55 to 150
W oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 5 sec Steady-State
Symbol RTHJA
Maximum 100 150
Units oC/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number: DS-AM2321PE_A
Analog Power
AM2321PE
SPECIFICATIONS (TA = 25oC UNLESS ...
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