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AM2324N Dataheets PDF



Part Number AM2324N
Manufacturers Analog Power
Logo Analog Power
Description N-Channel MOSFET
Datasheet AM2324N DatasheetAM2324N Datasheet (PDF)

Analog Power N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SOT-23 saves.

  AM2324N   AM2324N



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Analog Power N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SOT-23 saves board space • Fast switching speed • High performance trench technology AM2324N PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.047 @ VGS = 4.5V 20 0.055@ VGS = 2.5V 0.087@ VGS = 1.8V ID (A) 4.3 4.0 3.2 G D S ABSOLUTE MAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISE NOTED) Parameter Symbol Ratings Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM 20 V ±8 4.3 3.6 A 10 Continuous Source Current (Diode Conduction)a IS 1.6 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 1.3 0.9 TJ, Tstg -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes t <= 5 sec Steady-State a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Symbol Maximum RT HJA 100 166 Units oC/W Publication Order Number: DS-AM2324_H Analog Power AM2324N SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 8 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55oC VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1 A VGS = 2.5 V, ID = 1 A VGS = 1.8 V, ID = 1 A VDS = 5 V, ID = 1 A IS = 1 A, VGS = 0 V VDS = 10 V, VGS = 4.5 V, ID = 1 A VDD = 10 V, RL = 6 Ω , RG = 6 Ω, VGEN = 4.5 V Limits Unit Min Typ Max 0.4 1 uA 0.1 uA 1 5A 0.047 0.055 Ω 0.087 16 S 0.6 V 6 1 nC 2 8 16 ns 30 14 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in differe.


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