Document
Analog Power
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe SOT-23 saves board space
• Fast switching speed • High performance trench technology
AM2324N
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.047 @ VGS = 4.5V
20 0.055@ VGS = 2.5V
0.087@ VGS = 1.8V
ID (A) 4.3 4.0 3.2
G D
S
ABSOLUTE MAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISE NOTED)
Parameter
Symbol Ratings Units
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC TA=70oC
ID
IDM
20 V
±8 4.3 3.6 A 10
Continuous Source Current (Diode Conduction)a
IS 1.6 A
Power Dissipationa Operating Junction and Storage Temperature Range
TA=25oC TA=70oC
PD
1.3 0.9
TJ, Tstg -55 to 150
W oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
t <= 5 sec Steady-State
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Symbol Maximum
RT HJA
100 166
Units oC/W
Publication Order Number: DS-AM2324_H
Analog Power
AM2324N
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate-Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain CurrentA
Drain-Source On-ResistanceA
Forward TranconductanceA Diode Forward Voltage
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time
VGS(th) IGSS IDSS
ID(on)
rDS(on)
gfs VSD
Qg Qgs Qgd td(on) tr td(off) tf
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 8 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 55oC
VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1 A VGS = 2.5 V, ID = 1 A VGS = 1.8 V, ID = 1 A VDS = 5 V, ID = 1 A IS = 1 A, VGS = 0 V
VDS = 10 V, VGS = 4.5 V, ID = 1 A
VDD = 10 V, RL = 6 Ω , RG = 6 Ω,
VGEN = 4.5 V
Limits
Unit
Min Typ Max
0.4 1 uA 0.1 uA 1
5A 0.047 0.055 Ω 0.087
16 S 0.6 V
6 1 nC 2 8 16
ns 30 14
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in differe.