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AM290N10-02FP Dataheets PDF



Part Number AM290N10-02FP
Manufacturers Analog Power
Logo Analog Power
Description N-Channel MOSFET
Datasheet AM290N10-02FP DatasheetAM290N10-02FP Datasheet (PDF)

Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Hot Swap Inrush Limit Circuits • Uninterruptible Power Supplies and Inverters • Motor Speed Controls AM290N10-02FP VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 4.6 @ VGS = 10V 6.6 @ VGS = 6.5V ID (A) 290a TO-247 DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Volt.

  AM290N10-02FP   AM290N10-02FP



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Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Hot Swap Inrush Limit Circuits • Uninterruptible Power Supplies and Inverters • Motor Speed Controls AM290N10-02FP VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 4.6 @ VGS = 10V 6.6 @ VGS = 6.5V ID (A) 290a TO-247 DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C VGS ID IDM IS PD ±20 200 500 200 500 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 40 0.29 Units °C/W Notes a. Silicon and thermal rating is 290A, package is rated at 200A continuous b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM290N10-02FP_1A Analog Power AM290N10-02FP Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 50 A VGS = 6.5 V, ID = 44 A VDS = 15 V, ID = 10 A IS = 50 A, VGS = 0 V Dynamic b VDS = 50 V, VGS = 6.5 V, ID = 10 A VDS = 50 V, RL = 5 Ω, ID = 10 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 Mhz Min Typ Max Unit 1V ±100 nA 1 uA 25 420 A 4.6 mΩ 6.6 68 S 0.82 V 260 58 144 71 150 401 162 18470 1622 1504 nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technica.


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