P-Channel MOSFET
Analog Power
P-Channel 150-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast s...
Description
Analog Power
P-Channel 150-V (D-S) MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
AM3491P
VDS (V) -150
PRODUCT SUMMARY rDS(on) (mΩ)
1800 @ VGS = -10V 1900 @ VGS = -4.5V
ID (A) -0.9 -0.8
TSOP-6
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS -150
Gate-Source Voltage
VGS ±20
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
-0.9 -0.7 -5 -2.4
Power Dissipation a
TA=25°C TA=70°C
PD
2 1.3
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A
A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter
t <= 10 sec Steady State
Symbol Maximum
RθJA
62.5 110
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number: DS_AM3491P_1A
Analog Power
AM3491P
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Gate-Source Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a Drain-Source On-Resistance a
Forward Transconductance a Diode Forward Voltage a
VGS(th) IGSS
IDSS
ID(on)
rDS(on)
gfs VSD
VDS = VGS, ID = -250 uA VDS = 0 V, VGS = ±20 V VDS = -120 V, VGS =...
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