AM6968N

Analog Power AM6968N Dual N-Channel Logical Level MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PRODUCT SUMMARY VDS (V) 20 rDS(on) (OHM) 0.022 @ VGS = 4.5 V 0.030 @ VGS = 2.5V 0.047 @ VGS = 1.8V ID (A) 6.8 5.8 4.7 Low rDS(on) provides higher efficiency and extends battery life TSSOP-8 Top View D1 D2 Low thermal impedance copper leadframe TSSOP-8 saves board space D1 1 S1 2 8 D2 7 S2 G1 G2 Fast switching speed S1 3 6 S2 High performance trench technology G1 4 5 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ±12 Continuous Drain Currenta TA=25oC TA=70oC ID 6.8 5.4 A Pulsed Drain Currentb IDM ±30 Continuous Source Current (Diode Conduction)a IS 1.5 A Power Dissipationa TA=25oC TA=70oC PD 1.5 W 1.0 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RthJA Typ 72 100 Max 83 120 oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junct...