Document
Analog Power
N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • Automotive Systems • DC/DC Conversion Circuits • Battery Powered Power Tools
AM160N03-03D
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
30 3.9 @ VGS = 10V
ID (A) 93
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 30
Gate-Source Voltage
Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TC=25°C TC=25°C
VGS ID IDM IS PD
±20 93 350 93 50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 40 3
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number: DS_AM160N03-03D_1A
Analog Power
AM160N03-03D
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Symbol
VGS(th) IGSS
IDSS
ID(on) rDS(on)
gfs VSD
Qg Qgs Qgd td(on)
tr td(off)
tf Ciss Coss Crss
Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VDS = 15 V, ID = 20 A IS = 45 A, VGS = 0 V Dynamic b
VDS = 15 V, VGS = 4.5 V, ID = 20 A
VDS = 15 V, RL = 0.8 Ω, ID = 20 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 Mhz
Min Typ Max Unit
1V ±100 nA 1 uA 10
130 A 3.9 mΩ
11 S 0.75 V
36 12 13 12 15 89 30 6725 466 397
nC ns pF
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out
of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
© Preliminary
2 Publication Order Number: DS_AM160N03-03D_1A
Analog Power
AM160N03-03D
RDS(on) - On-Resistance(Ω)
Typical Electrical Characteristics
0.03 0.02 0.01
3V 3.5V
ID - Drain Current (A)
20 TJ = 25°C
15
10
5
4V,4.5V,6V,8V,10V 0
0 5 10 15 20 25
ID-Drain Current (A) 1. On-Resistance vs. Drain Current
0 012345
VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics
0.04 0.03
TJ = 25°C ID = 20A
100 TJ = 25°C
10
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
0.02 1
0.01 0.1
0 0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage
ID - Drain Current (A)
25 10V,8V, 6V,4.5V
20
15
10
4V 3.5V
3V
5
0 0 0.05 0.1 0.15 0.2 0.25 0.3 VDS - Drain-to-Source Voltage (V) 5. Output Characteristics
© Preliminary
3
Capacitance (pf)
0.01 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD - Source-to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage
12000 10000
8000 6000 4000 2000
0 0
F = 1MHz Ciss
Coss Crss
5
10 15
VDS-Drain-to-Source Voltage (V) 6. Capacitance
20
Publication Order Number: DS_AM160N03-03D_1A
Analog Power
AM160N03-03D
RDS(on) - On-Resistance(Ω) (Normalized)
VGS-Gate-to-S.