AM110P04-04M2B

Analog Power P-Channel 40-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits AM110P04-04m2B VDS (V) -40 PRODUCT SUMMARY rDS(on) (mΩ) 4.2 @ VGS = -10V 6 @ VGS = -4.5V ID (A) -110a ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -40 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C TC=25°C VGS ID IDM IS PD ±20 -110 -400 -110 300 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient c Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 0.5 Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. © Preliminary 1 Publication Order Number: DS_AM110P04-04m2B_1A Analog Power AM110P04-04m2B Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reve...