2N7002KB

Main Product Characteristics 2N7002KB 60V N-Channel MOSFET VDSS 60V RDS(on) 2Ω(max.) ID 0.3A Features and Benefits SOT-23 Marking and Pin Assignment Schematic Diagram  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  ESD Rating：1000V HBM  150℃ operating temperature  Lead free product Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Thermal Resistance Max. 0.3 1.2 0.63 60 ± 20 -55 to +150 Symbol RθJA Characteristics Junction-to-ambient (t ≤ 10s) ④ Typ. — Max. 200 Units A W V V °C Units ℃/W www.goodark.com Page 1 of 6 Rev.1.0 2N7002KB 60V N-Channel MOSFET Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance 60 — — VGS(th) IDSS IGSS Gate threshold voltage...