P-Channel MOSFET
Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize High Cell Density process. Low rD...
Description
Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature TO-252 Surface Mount Package Saves Board Space
High power and current handling capability Extended VGS range (±25) for battery pack
applications
AM20P02-99D
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
-20 118 @ VGS = -4.5V 178 @ VGS = -2.5V
ID (A) 17
14
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb
VDS VGS TA=25oC ID IDM
-20 V ±12 17 A ±40
Continuous Source Current (Diode Conduction)a
IS -30 A
Power Dissipationa Operating Junction and Storage Temperature Range
TA=25oC PD
50
TJ, Tstg -55 to 175
W oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W oC/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
September, 2003 - Rev. A PRELIMINARY
1 Publication Order Numbe...
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