AM50N03-12I

Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TO-252 Surface Mount Package Saves Board Space High power and current handling capability Low side high current DC-DC Converter applications AM50N03-12I PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 30 13 @ VGS = 10V 20 @ VGS = 4.5V ID (A) 51 41 ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TC=25oC ID IDM 30 V ±20 51 A 40 Continuous Source Current (Diode Conduction)a IS 30 A Power Dissipationa Operating Junction and Storage Temperature Range TC=25oC PD 50 TJ, Tstg -55 to 175 W oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature November, 2003 - Rev. A PRELIMINARY 1 Publication Order Number: DS-AM50N03-12...