AM90N03-06B

Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management such as computers, printers, and power supplies. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-263 saves board space Fast switching speed High performance trench technology AM90N03-06B PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 30 6 @ VGS = 10V 7.2 @ VGS = 4.5V ID (A) 90a D1 G1 S1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TC=25oC ID IDM IS TC=25oC PD TJ, Tstg 30 ±20 90 240 90 300 -55 to 175 V A A W oC THERMALRESISTANCERATINGS Parameter Symbol MaximumJunction-to-Ambienta RθJA MaximumJunction-to-Case RθJC Notes a. Package Limited b. Pulse width limited by maximum junction temperature Maximum Units 62.5 oC/W 0.5 oC/W PRELIMINARY 1 Publication Order Number: DS-AM90N04-03_A Analog Power AM90N03-06B SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parame te r Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Curre...