N-Channel MOSFET
Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast s...
Description
Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
AM12N65B
VDS (V) 650
PRODUCT SUMMARY rDS(on) (mΩ)
800 @ VGS = 10V 850 @ VGS = 6V
ID (A) 12a
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 650
Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TC=25°C TC=25°C
VGS ID IDM IS
±20 12 50 12
Power Dissipation
TC=25°C
PD
300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 62.5 1
Units °C/W
Notes a. Calculated continuous current based on maximum allowable junction temperature. b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number: DS_AM12N65B_1A
Analog Power
AM12N65B
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Gate-Source Threshold Voltage VGS(th)
VDS = VGS, ID = 250 uA
1
V
Gate-Body Leakage
IGSS VDS = 0 V, VGS = ±20 V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 520 V, VGS = 0 V VDS = 520 V, VGS = 0 V, TJ = 55°C
1 uA 25
On-State Drain Current a
ID(on)
VDS = 5 V, VGS = 10 V
30
...
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