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AP9T16GH-HF Dataheets PDF



Part Number AP9T16GH-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9T16GH-HF DatasheetAP9T16GH-HF Datasheet (PDF)

Advanced Power Electronics Corp. AP9T16GH-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Capable of 2.5V Gate Drive ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S Description AP9T16 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power app.

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Advanced Power Electronics Corp. AP9T16GH-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Capable of 2.5V Gate Drive ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S Description AP9T16 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID 20V 25mΩ 25A GD S TO-252(H) Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 4.5V Drain Current, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 20 +16 25 16 90 25 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Data and specifications subject to change without notice Value 5 62.5 Units ℃/W ℃/W 1 201408295 AP9T16GH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250uA VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VDS=VGS, ID=250uA VDS=5V, ID=18A VDS=16V, VGS=0V VGS=+16V, VDS=0V ID=18A VDS=16V VGS=4.5V VDS=10V ID=18A RG=3.3Ω VGS=5V VGS=0V .VDS=20V f=1.0MHz f=1.0MHz 20 - - V - - 25 mΩ - - 40 mΩ 0.5 - 1.5 V - 19 - S - - 10 uA - - +100 nA - 10 16 nC - 3 - nC - 5 - nC - 10 - ns - 98 - ns - 18 - ns - 6 - ns - 870 1390 pF - 160 - pF - 120 - pF - 1.4 - Ω Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions IS=18A, VGS=0V IS=18A, VGS=0V, dI/dt=100A/µs Min. Typ. Max. Units - - 1.3 V - 19 - ns - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 ID , Drain Current (A) RDS(ON) (mΩ) AP9T16GH-HF 100 T C =25 o C 80 5.0V 4.5V 60 3.5V 40 2.5V 20 V G =1.5V 0 0123456 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID , Drain Current (A) 80 T C = 150 o C 60 5.0V 4.5V 40 3.5V 20 2.5V V G =1.5V 0 0123456 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 42 I D = 5.2 A T C =25 o C 37 32 27 . 22 17 12 0 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage 10 Normalized RDS(ON) 1.6 I D =6A 1.4 V G =4.5V 1.2 1.0 0.8 0.6 -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 150 8 6 T j =150 o C 4 2 T j =25 o C Normalized VGS(th) 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 0.0 -50 0 50 100 T j , Junction Temperature ( o C ) 150 Fig 6. Gate Threshold Voltage v.s. Junction Temperature IS(A) 3 VGS , Gate to Source Voltage (V) AP9T16GH-HF 12 I D =18A 10 V DS =10V V DS =12V 8 V DS =16V 6 4 2 0 0 5 10 15 20 25 30 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics C (pF) f=1.0MHz 1200 1000 C iss 800 600 400 200 C oss C rss 0 1 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) Fig 8. Typical Capacitance Characteristics ID (A) 100 Operation in this area limited by RDS(ON) 100us 10 1ms T C =25 o C Single Pulse 10ms 100ms DC 1 0.1 1 10 V DS , Drain-to-Source Voltage (V) 100 Fig 9. Maximum Safe Operating Area 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 0.1 . 0.1 0.05 0.02 0.01 Single Pulse PDM t T Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 0.


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