Document
Advanced Power Electronics Corp.
AP9T16GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Capable of 2.5V Gate Drive
▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
G S
Description
AP9T16 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
BVDSS RDS(ON) ID
20V 25mΩ
25A
GD S
TO-252(H)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
TSTG TJ
Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 4.5V Drain Current, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation
Storage Temperature Range Operating Junction Temperature Range
20 +16 25 16 90 25 -55 to 150 -55 to 150
V V A A A W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data and specifications subject to change without notice
Value 5
62.5
Units ℃/W ℃/W
1 201408295
AP9T16GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VGS=0V, ID=250uA
VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
VDS=VGS, ID=250uA VDS=5V, ID=18A VDS=16V, VGS=0V VGS=+16V, VDS=0V ID=18A VDS=16V VGS=4.5V VDS=10V ID=18A RG=3.3Ω VGS=5V VGS=0V
.VDS=20V
f=1.0MHz f=1.0MHz
20 - - V
- - 25 mΩ
- - 40 mΩ
0.5 - 1.5 V
- 19 -
S
- - 10 uA
- - +100 nA
- 10 16 nC
- 3 - nC
- 5 - nC
- 10 - ns
- 98 - ns
- 18 - ns
- 6 - ns
- 870 1390 pF
- 160 - pF
- 120 - pF
- 1.4 - Ω
Source-Drain Diode
Symbol VSD trr Qrr
Parameter Forward On Voltage2 Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=18A, VGS=0V IS=18A, VGS=0V, dI/dt=100A/µs
Min. Typ. Max. Units - - 1.3 V - 19 - ns - 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
ID , Drain Current (A)
RDS(ON) (mΩ)
AP9T16GH-HF
100
T C =25 o C
80
5.0V 4.5V
60
3.5V
40
2.5V
20
V G =1.5V
0 0123456
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID , Drain Current (A)
80
T C = 150 o C
60
5.0V 4.5V
40 3.5V
20 2.5V
V G =1.5V
0 0123456
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
42
I D = 5.2 A T C =25 o C
37
32
27
.
22
17
12 0 2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
Normalized RDS(ON)
1.6
I D =6A 1.4 V G =4.5V
1.2
1.0
0.8
0.6 -50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2.0
150
8
6
T j =150 o C
4
2
T j =25 o C
Normalized VGS(th)
1.5 1.0 0.5
0 0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
1.2
0.0 -50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
IS(A)
3
VGS , Gate to Source Voltage (V)
AP9T16GH-HF
12
I D =18A 10 V DS =10V
V DS =12V 8 V DS =16V
6
4
2
0 0 5 10 15 20 25 30
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
C (pF)
f=1.0MHz
1200
1000
C iss
800
600
400
200
C oss C rss
0 1 5 9 13 17 21 25
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
ID (A)
100
Operation in this area limited by RDS(ON)
100us
10 1ms
T C =25 o C Single Pulse
10ms 100ms
DC
1 0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
. 0.1 0.05
0.02 0.01
Single Pulse
PDM t T
Duty factor = t/T Peak Tj = PDM x Rthjc + TC
0.01
0.