N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electronics Corp.
AP83T03AGMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple ...
Description
Advanced Power Electronics Corp.
AP83T03AGMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D BVDSS
▼ SO-8 Compatible with Heatsink
RDS(ON)
▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free
G
ID S
Description
AP83T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The PMPAK ® 5x6 ppackage is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
S S S G
30V 6mΩ 71A
D D D D
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current (Chip), VGS @ 10V Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
30 +20 71 23.2 18.6 200 50
5 45 -55 to 150 -55 to 150
V V A A A A W W mJ ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 2...
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