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AP83T03AGMT-HF

Advanced Power Electronics

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics Corp. AP83T03AGMT-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple ...


Advanced Power Electronics

AP83T03AGMT-HF

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Description
Advanced Power Electronics Corp. AP83T03AGMT-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D BVDSS ▼ SO-8 Compatible with Heatsink RDS(ON) ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G ID S Description AP83T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 ppackage is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. S S S G 30V 6mΩ 71A D D D D PMPAK® 5x6 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current (Chip), VGS @ 10V Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range 30 +20 71 23.2 18.6 200 50 5 45 -55 to 150 -55 to 150 V V A A A A W W mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 2...




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