N-Channel MOSFET
Advanced Power Electronics Corp.
AP60N2R5I
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switchi...
Description
Advanced Power Electronics Corp.
AP60N2R5I
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free
G
D
S
Description
AP60N2R5 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
VDS @ Tj,max.
RDS(ON) ID3
650V 2.5Ω 3.5A
G DS
TO-220CFM(I)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
600 V
VGS ID@TC=25℃ ID@TC=100℃ IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
+20 V 3.5 A 2.2 A 14 A
PD@TC=25℃
Total Power Dissipation
26 W
PD@TA=25℃ EAS
Total Power Dissipation Single Pulse Avalanche Energy4
1.92 W 8 mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value 4.8 65
...
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