P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP3P080N
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2....
Description
Advanced Power Electronics Corp.
AP3P080N
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive ▼ Small Package Outline
D
▼ Surface Mount Device
▼ RoHS Compliant & Halogen-Free
SOT-23S G
Description
AP3P080 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23S package is widely preferred for commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
S
BVDSS RDS(ON) ID
-30V 80mΩ -3.2A
D
G S
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS
ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
- 30 +12
-3.2 -2.6 -10 1.25 -55 to 150 -55 to 150
V V A A A W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 100
Unit ℃/W
1 201511271
AP3P080N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on...
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