16 Megabit RadTolerant SRAM MCM
Standard Products
UT9Q512K32E 16 Megabit RadTolerant SRAM MCM
Data Sheet June 28, 2011
FEATURES 25ns maximum (5 volt ...
Description
Standard Products
UT9Q512K32E 16 Megabit RadTolerant SRAM MCM
Data Sheet June 28, 2011
FEATURES 25ns maximum (5 volt supply) address access time Asynchronous operation for compatible with industry
standard 512K x 8 SRAMs TTL compatible inputs and output levels, three-state
bidirectional data bus Operational environment:
- Total dose: 50 krads(Si)
- SEL Immune >110 MeV-cm2/mg - LETTH(0.25) = >52 MeV-cm2/mg - Saturated Cross Section (cm2) per bit, 2.8E-8
- <1.1E-9 errors/bit-day, Adams 90% geosynchronous heavy ion
Packaging:
- 68-lead dual cavity ceramic quad flatpack (CQFP) (11.0 grams)
Standard Microcircuit Drawing 5962-01511
- QML Q and Vcompliant part
INTRODUCTION The UT9Q512K32E RadTol product is a high-performance 2M byte (16Mbit) CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs with a common output enable. Memory expansion is provided by an active LOW chip enable (En), an active LOW output enable (G), and three-state drivers. This device has a power-down feature that reduces power consumption by more than 90% when deselected.
Writing to each memory is accomplished by taking chip enable (En) input LOW and write enable (Wn) inputs LOW. Data on the eight I/O pins (DQ0 through DQ7) is then written into the location specified on the address pins (A0 through A18). Reading from the device is accomplished by taking chip enable (En) and output enable (G) LOW while forcing write enable (Wn) HIGH. Under these conditions, the ...
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