AP97T07GP-HF

Advanced Power Electronics Corp. AP97T07GP-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free G D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications. BVDSS RDS(ON) ID G D S 75V 3.6mΩ 220A TO-220(P) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TC=25℃ IDM PD@TC=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V(Package Limited) Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 75 +20 220 150 120 880 375 -55 to 175 -55 to 175 Units V V A A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 0.4 62 Units ℃/W ℃/W 1 200907281 AP97T07GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakd...