P AND N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP3700M
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple D...
Description
Advanced Power Electronics Corp.
AP3700M
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance
D2 D2
D1
D1
▼ RoHS Compliant & Halogen-Free
SO-8
G2 S2 G1 S1
Description
AP3700 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
N-CH P-CH
G1
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
G2 S1
30V 20mΩ 7.8A -30V 45mΩ -5.5A
D2
S2
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
30 -30
V
VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20 +20 7.8 -5.5 6.2 -4.4 20 -20
2 -55 to 150 -55 to 150
V A A A W ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 62.5
Unit ℃/W
1 201508281
AP3700M
N-CH Electrical Characteristics@Tj=25oC(unle...
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