Document
Advanced Power Electronics Corp.
AP2763I-A-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free
G
Description
S
AP2763 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink
BVDSS
RDS(ON) ID4
750V 1.45Ω
8A
G D S
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V4 Drain Current, VGS @ 10V4 Pulsed Drain Current1
Total Power Dissipation Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
750 +30
8 5 30 50 18 -55 to 150 -55 to 150
V V A A A W mJ ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value 2.5 65
Units ℃/W ℃/W
1 201502254
AP2763I-A-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VGS=0V, ID=1mA
VGS=10V, ID=4.0A
VDS=VGS, ID=250uA
VDS=10V, ID=4.0A VDS=600V, VGS=0V VGS= +30V, VDS=0V ID=4A VDS=600V VGS=10V VDD=360V ID=4A RG=10Ω VGS=10V VGS=0V VDS=25V f=1.0MHz
.f=1.0MHz
750 -
-
- - 1.45
2-4
-7- - 100 - - +100 - 47 75 - 8.5 - 20 - 15 - 13 - 74 - 21 - 1880 3010 - 140 -9- 2.6 5.2
V Ω
V
S uA nA nC nC nC ns ns ns ns pF pF pF Ω
Source-Drain Diode
Symbol VSD
Parameter Forward On Voltage3
trr Reverse Recovery Time Qrr Reverse Recovery Charge
Test Conditions IS=4.0A, VGS=0V IS=4.0A, VGS=0V, dI/dt=100A/µs
Min. Typ. Max. Units - - 1.5 V - 400 - ns - 7 - µC
Notes: 1.Pulse width limited by max. junction temperature. 2.Starting Tj=25oC , VDD=50V , RG=25Ω, L=1mH 3.Pulse test 4.Ensure that the junction temperature does not exceed T Jmax..
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP2763I-A-HF
ID , Drain Current (A)
Normalized BVDSS
5.0
T C =25 o C
4.0
10V 7.0V 5.0V
3.0
4.5V
2.0
1.0
V G =4.0V
0.0 0 2 4 6 8 10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID , Drain Current (A)
5.00
T C =150 o C
4.00
3.00
10V 7.0V 5.0V 4.5V
2.00 V G =4.0V
1.00
0.00 0 4 8 12 16 20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.2
1.1
.1.0
0.9
0.8 -50 0 50 100
Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction Temperature
10.0
8.0
T j =150 o C
T j =25 o C
6.0
4.0
2.0
0.0 0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
1.2
Normalized VGS(th)
Normalized RDS(ON)
3.0
I D = 4.0 A 2.5 V G =10V
2.0
1.5
1.0
250.5
0.0 -50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
-50 0
50 100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
150
3
IS(A)
VGS , Gate to Source Voltage (V)
AP2763I-A-HF
12
I D = 4.5 A
10
V DS = 380 V 8 V DS = 480 V
V DS = 600 V
6
4
2
0 0 10 20 30 40 50 60
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
C (pF)
f=1.0MHz
10000
C iss
1000
C oss
100
C10 rss
1 1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
ID (A)
100.00
1 Duty factor=0.5
Normalized Thermal Response (Rthjc)
10.00
100us
1ms
1.00
10ms 100ms
0.10
0.01 0.1
T C =25 o C Single Pulse
1
10
100
V DS , Drain-to-Source Voltage (V)
1s DC
1000
.
0.2 0.1 0.1
0.05 0.02 0.