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AP2763I-A-HF Dataheets PDF



Part Number AP2763I-A-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP2763I-A-HF DatasheetAP2763I-A-HF Datasheet (PDF)

Advanced Power Electronics Corp. AP2763I-A-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G Description S AP2763 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power .

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Advanced Power Electronics Corp. AP2763I-A-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G Description S AP2763 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink BVDSS RDS(ON) ID4 750V 1.45Ω 8A G D S TO-220CFM(I) Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V4 Drain Current, VGS @ 10V4 Pulsed Drain Current1 Total Power Dissipation Single Pulse Avalanche Energy2 Storage Temperature Range Operating Junction Temperature Range 750 +30 8 5 30 50 18 -55 to 150 -55 to 150 V V A A A W mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 2.5 65 Units ℃/W ℃/W 1 201502254 AP2763I-A-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance3 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=1mA VGS=10V, ID=4.0A VDS=VGS, ID=250uA VDS=10V, ID=4.0A VDS=600V, VGS=0V VGS= +30V, VDS=0V ID=4A VDS=600V VGS=10V VDD=360V ID=4A RG=10Ω VGS=10V VGS=0V VDS=25V f=1.0MHz .f=1.0MHz 750 - - - - 1.45 2-4 -7- - 100 - - +100 - 47 75 - 8.5 - 20 - 15 - 13 - 74 - 21 - 1880 3010 - 140 -9- 2.6 5.2 V Ω V S uA nA nC nC nC ns ns ns ns pF pF pF Ω Source-Drain Diode Symbol VSD Parameter Forward On Voltage3 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions IS=4.0A, VGS=0V IS=4.0A, VGS=0V, dI/dt=100A/µs Min. Typ. Max. Units - - 1.5 V - 400 - ns - 7 - µC Notes: 1.Pulse width limited by max. junction temperature. 2.Starting Tj=25oC , VDD=50V , RG=25Ω, L=1mH 3.Pulse test 4.Ensure that the junction temperature does not exceed T Jmax.. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2763I-A-HF ID , Drain Current (A) Normalized BVDSS 5.0 T C =25 o C 4.0 10V 7.0V 5.0V 3.0 4.5V 2.0 1.0 V G =4.0V 0.0 0 2 4 6 8 10 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID , Drain Current (A) 5.00 T C =150 o C 4.00 3.00 10V 7.0V 5.0V 4.5V 2.00 V G =4.0V 1.00 0.00 0 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 1.2 1.1 .1.0 0.9 0.8 -50 0 50 100 Junction Temperature ( o C) 150 Fig 3. Normalized BVDSS v.s. Junction Temperature 10.0 8.0 T j =150 o C T j =25 o C 6.0 4.0 2.0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 Normalized VGS(th) Normalized RDS(ON) 3.0 I D = 4.0 A 2.5 V G =10V 2.0 1.5 1.0 250.5 0.0 -50 0 50 100 T j , Junction Temperature ( o C ) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 150 1.2 0.8 0.4 -50 0 50 100 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 3 IS(A) VGS , Gate to Source Voltage (V) AP2763I-A-HF 12 I D = 4.5 A 10 V DS = 380 V 8 V DS = 480 V V DS = 600 V 6 4 2 0 0 10 20 30 40 50 60 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics C (pF) f=1.0MHz 10000 C iss 1000 C oss 100 C10 rss 1 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 8. Typical Capacitance Characteristics ID (A) 100.00 1 Duty factor=0.5 Normalized Thermal Response (Rthjc) 10.00 100us 1ms 1.00 10ms 100ms 0.10 0.01 0.1 T C =25 o C Single Pulse 1 10 100 V DS , Drain-to-Source Voltage (V) 1s DC 1000 . 0.2 0.1 0.1 0.05 0.02 0.


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