N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP2626GY
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Dri...
Description
Advanced Power Electronics Corp.
AP2626GY
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ Smaller Outline Package ▼ Surface mount package ▼ RoHS compliant
D2 S1
D1
SOT-26
G2 S2 G1
BVDSS RDS(ON) ID
30V 72mΩ 3.3A
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial applications.
G1
D1
G2 S1
D2 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a
Parameter Thermal Resistance Junction-ambient3
Rating 30 ±20 3.3 2.6 10 1.2 0.01
-55 to 150 -55 to 150
Units V V A A A W
W/℃ ℃ ℃
Max.
Value 110
Unit ℃/W
Data and specifications subject to change without notice
200519062-1/4
AP2626GY
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Res...
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