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AP9980GM Dataheets PDF



Part Number AP9980GM
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9980GM DatasheetAP9980GM Datasheet (PDF)

Advanced Power Electronics Corp. AP9980GM RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface Mount Package Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. BVDSS RDS(ON) ID 80V 52mΩ 4.6A D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA.

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Advanced Power Electronics Corp. AP9980GM RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface Mount Package Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. BVDSS RDS(ON) ID 80V 52mΩ 4.6A D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Rating 80 +20 4.6 2.9 30 2 -55 to 150 -55 to 150 Value 62.5 Units V V A A A W ℃ ℃ Unit ℃/W Data and specifications subject to change without notice 1 200808191 AP9980GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70oC) Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V, ID=1mA VGS=10V, ID=4.6A VGS=4.5V, ID=3.6A VDS=VGS, ID=250uA VDS=10V, ID=4A VDS=80V, VGS=0V VDS=64V ,VGS=0V VGS= +20V ID=4A VDS=64V VGS=4.5V VDS=40V ID=1A RG=3.3Ω,VGS=10V RD=40Ω VGS=0V VDS=25V f=1.0MHz 80 - - V - - 52 mΩ - - 60 mΩ 1 - 3V -7-S - - 1 uA - - 25 uA - - +100 nA - 19 30 nC - 5 - nC - 10 - nC - 11 - ns - 6 - ns - 30 - ns - 16 - ns - 1820 2910 pF - 130 - pF - 94 - pF Source-Drain Diode Symbol Parameter VSD Forward On Voltage2 trr Reverse Recovery Time2 Qrr Reverse Recovery Charge Test Conditions IS=1.6A, VGS=0V IS=4A, VGS=0V, dI/dt=100A/µs Min. Typ. Max. Units - - 1.2 V - 44 - ns - 90 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 IS(A) RDS(ON) (mΩ) ID , Drain Current (A) 70 60 T A =25 o C 50 40 10V 7.0V 5.0V 4.5V 30 20 V G =3.0V 10 0 0 2 4 6 8 10 12 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 55 I D =3.6A T A =25 o C 50 45 40 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage 4 3 2 T j =150 o C 1 T j =25 o C 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 VGS(th) (V) Normalized RDS(ON) ID , Drain Current (A) AP9980GM 50 T A =150 o C 40 30 10V 7.0V 5.0V 4.5V 20 V G =3.0V 10 0 0 2 4 6 8 10 12 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 2.3 I D = 4.6 A V G =10V 1.8 1.3 0.8 0.3 -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 3 2.5 2 1.5 1 0.5 -50 0 50 100 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 3 AP9980GM VGS , Gate to Source Voltage (V) 16 I D =4A V DS =40V 12 V DS =50V V DS =64V 8 4 0 0 10 20 30 40 50 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 100 ID (A) 10 1ms 1 10ms 0.1 T A =25 o C Single Pulse 100ms 1s 0.01 0.1 DC 1 10 100 V DS , Drain-to-Source Voltage (V) 1000 Fig 9. Maximum Safe Operating Area f=1.0MHz 10000 Ciss 1000 Coss 100 Crss C (pF) 10 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 8. Typical Capacitance Characteristics Normalized Thermal Response (Rthja) 1 0.1 0.01 Duty factor=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135℃/W 0.001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) 10 100 1000 Fig 10. Effective Transient Thermal Impedance VDS 90% 10% VGS td(on) tr td(off) tf VG 4.5V QGS QG QGD Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D 8 7 65 1 2 34 e B E1 E SYMBOLS A A1 B c D E1 E L θ e Millimeters MIN 1.35 NOM 1.55.


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