Document
Advanced Power Electronics Corp.
AP9980GM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface Mount Package
Description
D2 D2 D1 D1
SO-8
G2
S2 G1 S1
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.
BVDSS RDS(ON) ID
80V 52mΩ 4.6A
D1 D2
G1 G2 S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating 80 +20 4.6 2.9 30 2
-55 to 150 -55 to 150
Value 62.5
Units V V A A A W ℃ ℃
Unit ℃/W
Data and specifications subject to change without notice
1 200808191
AP9980GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
VGS=0V, ID=1mA
VGS=10V, ID=4.6A
VGS=4.5V, ID=3.6A
VDS=VGS, ID=250uA VDS=10V, ID=4A VDS=80V, VGS=0V VDS=64V ,VGS=0V VGS= +20V ID=4A VDS=64V VGS=4.5V VDS=40V ID=1A RG=3.3Ω,VGS=10V RD=40Ω VGS=0V VDS=25V f=1.0MHz
80 - - V
- - 52 mΩ
- - 60 mΩ
1 - 3V -7-S - - 1 uA - - 25 uA - - +100 nA - 19 30 nC - 5 - nC - 10 - nC - 11 - ns - 6 - ns - 30 - ns - 16 - ns - 1820 2910 pF - 130 - pF - 94 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=1.6A, VGS=0V
IS=4A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units - - 1.2 V - 44 - ns - 90 - nC
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
IS(A)
RDS(ON) (mΩ)
ID , Drain Current (A)
70
60 T A =25 o C
50 40
10V 7.0V 5.0V 4.5V
30
20
V G =3.0V
10
0 0 2 4 6 8 10 12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
55
I D =3.6A T A =25 o C
50
45
40 2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
3
2 T j =150 o C
1
T j =25 o C
0 0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
1.4
VGS(th) (V)
Normalized RDS(ON)
ID , Drain Current (A)
AP9980GM
50
T A =150 o C
40 30
10V 7.0V 5.0V 4.5V
20
V G =3.0V
10
0 0 2 4 6 8 10 12
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.3
I D = 4.6 A V G =10V
1.8
1.3
0.8
0.3
-50 0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
150
3
2.5
2
1.5
1
0.5 -50 0 50 100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
150
3
AP9980GM
VGS , Gate to Source Voltage (V)
16
I D =4A
V DS =40V 12 V DS =50V
V DS =64V
8
4
0 0 10 20 30 40 50
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
ID (A)
10
1ms
1
10ms
0.1 T A =25 o C Single Pulse
100ms 1s
0.01 0.1
DC
1 10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
f=1.0MHz
10000
Ciss
1000
Coss 100 Crss
C (pF)
10 1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
Normalized Thermal Response (Rthja)
1 0.1 0.01
Duty factor=0.5
0.2 0.1 0.05
0.02 0.01
Single Pulse
PDM t T
Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135℃/W
0.001 0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS 90%
10% VGS
td(on) tr
td(off) tf
VG
4.5V QGS
QG QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8 7 65
1 2
34
e B
E1
E
SYMBOLS
A A1 B c D E1 E L θ e
Millimeters
MIN 1.35
NOM 1.55.